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5 قطعة FQP50N06 TO-220 50N06 60V MOSFET التأثير الميداني N-قناة MOS أنبوب

KWD 3.500
ماركة
XYwsh
وزن
10 g
– 1 +

مميزات خاصة

  • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
  • Low gate charge ( typical 31 nC)
  • Low Crss ( typical 65 pF)
  • Fast switching
  • 100% avalanche tested

وصف

Features
50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 65 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating

Description
These NChannel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for powermanagement in portable and battery operated products

منتجات شبيهه

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