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100% جديد المستوردة الأصلي MBQ60T65PES MBQ60T65 60T65PES 60T65 TO-247 IGBT أنبوب واحد 60A 650V (10 قطعة/الوحدة)

KWD 9
ماركة
LIUWEIJIE
وزن
80 g
– 1 +

مميزات خاصة

  • 1: Transistor IGBT adapts to power motherboard
  • 2: MBQ60T65PES IGBT Transistors meet the specific needs of welding pliers.
  • 3:Rated current: IGBT field-effect transistor 60A 650V
  • 4:Features and advantages: Long service life, fast switching, durable materials.
  • 5:Widely used: MBQ60T65PES 60T65PES IGBT transistors are widely used in various electronic components.
  • 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.

وصف

MBQ60T65PES is an insulated gate bipolar transistor (IGBT) with the following specific parameters: 1 Dissipative power (PD): At a shell temperature (Tc) of 25 ℃, the dissipated power is 428W. 2. Collector current (IC): When the collector temperature (Tc) is 100 ℃, the collector current is 60A. 3. Collector emitter voltage (VCES): 650V. 4. Collector emitter saturation voltage (VCE (sat)): When the collector current (Ic) is 60A, it is 2.4V High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 60A Eoff = 0.53mJ @ TC = 25°C High Input Impedance trr = 110ns (typ.) @diF/dt = 500A/ μs Maximum Junction Temperature 175°C

منتجات شبيهه

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