Collector−Emitter Saturation Voltage −VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability
Description
Complementary silicon power transistors are designed forgeneral−purpose switching and amplifier applications.
Collector−Emitter Voltage(VCEO):60V
Collector−Base Voltage:100V
Emitter−Base Voltage:7V
Collector Current – Continuous:15A
Base Current:7A
Package Including:
10pcs* 2N3055