Monolithic Construction with Built−in Base−Emitter Shunt Resistors
Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc
We have undergone rigorous testing and stable performance
Description
Designed for general−purpose amplifier and low−speed switching applications.
Collector Emitter Voltage V(br)ceo:100V
Power Dissipation Pd:80W
DC Collector Current:8A
DC Current Gain hFE:200hFE
Maximum Collector Cut-off Current:0.05mA
Minimum Operating Temperature:-65 °C
Maximum Operating Temperature:+150 °C
Dimensions:10.4 x 4.6 x 9.15mm
Package include
10pcs*TIP102