High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Collector-emitter saturation voltage - VCE (sat) = 2 V (maximum) at IC = 3 A
Low collector-emitter saturation voltage
Complementary NPN - PNP transistors
Description
The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications.
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices
Designed for general−purpose amplifier and low−speed switching applications
Package include:
20pcs*TIP122