NPT Trench Technology, Positive temperature coefficient.
Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C.
Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C.
Extremely enhanced avalanche capability.
NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability
Description
Using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation.This device is well suited for the resonant or soft switchingapplication such as induction heating, microwave oven, etc.
Collector-Emitter Voltage:1200V
Collector Current:25A
Maximum Power Dissipation:312W
Diode Continuous Forward Current::25A
Package Including:
5pcs*FGA25N120ANTD