The IRFP250N 200V single N channel power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Continuous Drain Current Id:30A
Drain Source Voltage Vds:200V
On Resistance Rds(on):0.075ohm
Rds(on) Test Voltage Vgs:10V
Threshold Voltage Vgs:4V
Power Dissipation Pd:214W
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+175 °C
Package include
5pcs*IRFP250N