Third generation Power MOSFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Maximum Continuous Drain Current:11 A
Maximum Drain Source Voltage:200 V
Maximum Drain Source Resistance:500 mΩ
Minimum Gate Threshold Voltage:2V
Dimensions:10.41 x 4.7 x 9.01mm
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+150 °C
Package include
10pcs*IRF9640