The IRF3205PBF is a N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Continuous Drain Current Id:110A
Drain Source Voltage Vds:55V
On Resistance Rds(on):0.008ohm
Power Dissipation Pd:150W
Operating Temperature Max:175°C
Minimum Operating Temperature:-55 °C
Maximum Gate Source Voltage:-20 V, +20 V
Dimensions:10.54 x 4.69 x 8.77mm
Package include:
10pcs*IRF3205