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BOJACK IRF520N MOSFET Transistors IRF520N 9.7 A 100 V N-Channel Power MOSFET TO-220AB (Pack of 10)

KWD 3.500

Brand
BOJACK
Weight
113 g
1 +

Special Features

  • Transistor type: MOSFET
  • Transistor polarity: N-Channel
  • Drain current (Id Max): 9.7A
  • Voltage Vds Max: 100V
  • Power(Max): 48W

Description

BOJACK IRF520N MOSFET is a field effect transistor that can be
widely used in analog circuits and digital circuits.

Basic parameters:

The IRF520N is available in a TO-220AB package
On-state resistance Rds(on): 0.20 ohm
Voltage Vgs highest: ±20V
Number of stitches: 3
Operating Temperature:-55 °C to +175 °C
Thermal resistance junction to case A: 0.32°C/W
Voltage Vds Typical: 100V
Current Id continuous: 9.7A
Current Idm pulse: 38A
Surface Mount Device: Through Hole Mounting

Lead-free environmental protection

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