BOJACK IRF520N MOSFET is a field effect transistor that can be
widely used in analog circuits and digital circuits.
Basic parameters:
The IRF520N is available in a TO-220AB package
On-state resistance Rds(on): 0.20 ohm
Voltage Vgs highest: ±20V
Number of stitches: 3
Operating Temperature:-55 °C to +175 °C
Thermal resistance junction to case A: 0.32°C/W
Voltage Vds Typical: 100V
Current Id continuous: 9.7A
Current Idm pulse: 38A
Surface Mount Device: Through Hole Mounting
Lead-free environmental protection