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BOJACK IRF640 MOSFET IRF640N 18A 200V IRF640NPBF N-Channel Power MOSFET TO-220AB (Pack of 10)

KWD 3.500

Brand
BOJACK
Weight
113 g
1 +

Special Features

  • Transistor type: MOSFET
  • Transistor polarity: N-Channel
  • Drain current (Id Max): 18A
  • Voltage Vds Max: 200V
  • Power(Max): 125W

Description

BOJACK IRF640 MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits.

Basic parameters:

The IRF640 is available in a TO-220AB package
On-state resistance Rds(on): 0.15ohm
Voltage Rds measurement: 10V
Voltage Vgs highest: 4V
Package Type: TO-220AB
Number of stitches: 3
Thermal resistance junction to case A: 1°C/W
Voltage Vgs @ Rds on Measurement: 10V
Voltage Vds Typical: 200V
Current Id continuous: 18A
Current Idm pulse: 72A
Surface Mount Device: Through Hole Mounting
Threshold voltage, Vgs th Typical value: 4V
Threshold voltage, Vgs th highest: 4V

Lead-free environmental protection

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{"error":"Error","cart_limit":"You have too many items in your cart.","prod_limit":"You cannot add any more of this item"}