BOJACK IRF510N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits.

Basic parameters:

The IRF510N is available in a TO-220AB package
On-state resistance Rds(on): 0.54 ohm
Voltage Vgs highest: ±20V
Number of stitches: 3
Operating Temperature:-55 °C to +175 °C
Thermal resistance junction to case A: 0.29°C/W
Voltage Vds Typical: 100V
Current Id continuous: 5.6A
Current Idm pulse: 20A
Surface Mount Device: Through Hole Mounting

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