The IRLL2705TRPBF is fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area.
This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking.
Continuous Drain Current Id:3.8A
Drain Source Voltage Vds:55V
On Resistance Rds(on):0.04ohm
Rds(on) Test Voltage Vgs:10V
Threshold Voltage Vgs:2V
Power Dissipation Pd:1W
Operating Temperature Max:150°C
Dimensions:6.7 x 3.7 x 1.739mm
Minimum Operating Temperature:-55 °C
Package include
10pcs*LL2705