2N5401 2N5551 are complementary silicon transistors
High collector breakdown voltage (2N5551): VCBO = 180V, VCEO = 160V
High voltage application
NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability
Description
The 2N5401(PNP),2N5551(NPN)are complementary sllicon planar epitaxial transistors intended for general purpose high voltage amplifier and switching applicattons.
Package Including
100pcs(50pcs 2N5401+50pcs 2N5551)