Fifth GenerationPower MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Maximum Continuous Drain Current:18 A
Maximum Drain Source Voltage:200V
Maximum Drain Source Resistance:150 mΩ
Maximum Gate Threshold Voltage:4V
Maximum Gate Source Voltage:-20 V, +20 V
Maximum Power Dissipation:150 W
Maximum Operating Temperature:+175 °C
Minimum Operating Temperature:-55 °C
Height :8.77mm
Package include:
10pcs*IPF640NPBF