Operating junction temperature range from -55°C to 175°C
On resistance Rds(on) of 44mohm at Vgs of 10V
Drain to source voltage Vds is 100V
Continuous drain current Id of 33A at Vgs 10V and 25°C
Gate to source voltage is ±20V
Description
This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Transistor Polarity:N Channel
Continuous Drain Current Id:33A
Drain Source Voltage Vds:100V
On Resistance Rds(on):0.044ohm
Rds(on) Test Voltage Vgs:10V
Threshold Voltage Vgs:4V
No. of Pins:3Pins
Operating Temperature Max:175°C
Package include:
10pcs*IRF540