FDB14N30TM N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
Drain-Source Breakdown Voltage:300V
Maximum Continuous Drain-Source Diode Forward Current:14A
Maximum Pulsed Drain-Source Diode Forward Current:56A
Package Including
5pcs* FDB14N30TM