The power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge.
Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Maximum Continuous Drain Current:150A
Maximum Drain Source Voltage:30 V
Maximum Drain Source Resistance:4 mΩ
Maximum Gate Threshold Voltage:2.3V
Minimum Gate Threshold Voltage:1.4V
Maximum Power Dissipation:140 W
Minimum Operating Temperature:-55 °C
Maximum Operating Temperature:+175 °C
Package include
10pcs *IRL7833