Features
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR2153D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD-FREE

Description
The IR2153D(S) are an improved version of thepopular IR2155 and IR2151 gate driver ICs, and incor-porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown featurehas been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage controlsignal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockoutthreshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup.Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and byincreasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizingthe latch immunity of the device, and providing comprehensive ESD protection on all pins