The 2N7002 enhancement-mode (normally-off) transistors utilize avertical DMOS structure and Supertex's well-proven silicon-gatemanufacturing process. This combination produces devices withthe power handling capabilities of bipolar transistors and with thehigh input impedance and positive temperature coefficient inher-ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-inducedsecondary breakdown.
Supertex's vertical DMOS FETs are ideally suited to a wide rangeof switching and amplifying applications where high breakdownvoltage, high input impedance, low input capacitance, and fastswitching speeds are desired.
Package Including:
100pcs* 2N7002