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Description
Transistor polarity: N-Channel
Gate/source breakdown voltage: 25 V
RDS (conduction) : 0.014 Ohms
Drain/source breakdown voltage: 650 V
Rds On- drain-source on-resistance: 9.3 mOhms
Vgs - grid - source voltage: 20 V
Installation style: Through Hole
Package Including:
10pcs*IRFB4115PBF