FEATURES
·Low drain-sourceon-resistance: RDS(ON)=0.165Ω(typ.)
·Low leakage current:IDSS=100μA(max (VDS=600V)
·Enhancement mode: Vth=3.0 to 5.0V (VDS=10V,ID=1mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·SwitchingVoltageRegulators