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Advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Drain-Source Voltage:55V
Drain Current-Continuous:110A
Drain Current-Single Pluse:390A
Total Dissipation @TC=25°C:200W
Operating Junction Temperature: -55~175℃
Package Including:
5pcs* IRFP064NPBF
-10%
Bridgold 20pcs 10 Types 74LSxx Series Low-Power Schottky Logic IC，Digital Integrated chip，Including:74LS00 74LS02 74LS04 74LS08 74LS32 74LS47 74LS86 74LS90 74LS138 74LS245 Each 2 pcs.
KWD 4.500
Bridgold 5pcs 2N3771 2N 3771 High Power NPN Silicon Power Transistors 40V 30A,to-3.
KWD 4.500
Bridgold 10pcs TIP102 102 Bipolar (BJT) Single NPN Darlington Transistor, 100 V/8 A,3-Pin TO-220
KWD 4
Bridgold 50pcs 10Types IRF Series Mosfet transistors Assortment Kit, Including IRFZ44 IRF510 IRF520 IRF530 IRF540 IRF640 IRF740 IRF840 IRF3205 IRF9540 Package
KWD 7
