Maximum Base Emitter Saturation Voltage 1.2V@150mA, 2V@500mA
Maximum Collector Base Voltage 75V
Maximum Collector Emitter Saturation Voltage 0.3V@150mA, 1V@500mA
Maximum Collector Emitter Voltage 40V
Description
This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.