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Special Features

  • 1: Transistor IGBT adapts to power motherboard
  • 2: GT50JR22 IGBT Transistors meet the specific needs of welding pliers.
  • 3:Rated current: IGBT field-effect transistor 50A 600V
  • 4:Features and advantages: Long service life, fast switching, durable materials.
  • 5:Widely used: GT50JR22 50JR22 IGBT transistors are widely used in various electronic components.
  • 6:Electrostatic bag packaging, convenient for storage and use. There are labels and labels for easy identification.

Description

Features (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.05 µs (typ.) (IC = 50 A) FWD : trr = 0.35 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.55 V (typ.) (IC = 50 A) (6) High junction temperature : Tj = 175 (max)

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