Product type: MOSFET RoHS: Detailed Information REACH - SVHC: Technology: Si Installation style: Through Hole Packaging/Box: TO-220-3 Transistor polarity: N-Channel Number of channels: 1 channel Vds drain source breakdown voltage: 400 V Id - Continuous drain current: 10 A Rds On drain source on resistance: 550 mOhms Vgs - Gate Source Voltage: -20 V,+20 V Vgs th gate source threshold voltage: 4 V QG gate charge: 63 nC Minimum operating temperature: -55 ° C Maximum operating temperature:+150 ° C Pd power dissipation: 125 W Channel mode: Enhancement Series: IRF Encapsulation: Tube Configuration: Single Descent time: 24 ns Height: 15.49 mm Length: 10.41 mm Product type: MOSFETs Rise time: 27 ns Subcategory: Transistors Transistor type: 1 N-Channel Typical shutdown delay time: 50 ns Typical connection delay time: 14 ns Width: 4.7 mm