Features
1.Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
2.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
3.It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Specification
On-state resistance Rds(on): 0.04 ohm
Voltage Vgs highest: Positive and Negative 20V
Number of stitches: 3
Operating Temperature:-55 °C to +175 °C
Thermal resistance junction to case A: 2.0°C/W
Voltage Vds Typical: 200V
Current Id continuous: 50A
Current Idm pulse: 200A
Surface Mount Device: Through Hole Mounting

Package includes:
6 x IRFP260 Regulator Transistors