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100 قطعة 2N7000 2N 7000 N-وضع تعزيز القناة ترانزستور التأثير الميداني ، 60 فولت 20mA ، TO-92.

KWD 3
KWD 3.500

ماركة
Bridgold
وزن
50 g
1 +

مميزات خاصة

  • Low CISS and fast switching speeds
  • Free from secondary breakdown
  • High input impedance and high gain.
  • Complementary N- and P-Channel devices
  • NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability. We do not provide technical support, please familiarize yourself with the parameters and performance of the purchased products in advance. Sincerely apologize for you.

وصف

The 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure.This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary break down.
Drain Source Voltage:60V
Drain Current:200mA
Operating and Storage Temperature Range: – 55 to +150℃
Package include:
100pcs*2N7000

منتجات شبيهه


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