High Power Capability: IRF520N is designed for high-power applications, with the ability to withstand larger currents and voltages, making it a reliable choice for demanding electronic projects
Low Power Loss: With lower resistance in the on state, IRF520N minimizes power loss, delivering optimal performance and efficiency
Fast Switching Speed: IRF520N is engineered for high-frequency circuit design, making it ideal for speedy and precise switching of electronic signals
Excellent Thermal Stability: As a power field effect transistor, IRF520N features outstanding thermal stability, which results in improved equipment reliability, particularly during high-power operation
Versatile Applications: With its exceptional performance, IRF520N is suitable for a wide variety of applications across multiple fields, including communications, automobiles, industry, lighting, and more
Description
PD Maximum power dissipation: 48W
ID Maximum drain-source current: 9.7A
V(BR)DSS drain-source breakdown voltage: 100V
RDS(ON)Ω internal resistance: 0.2Ω
VRDS(ON)ld on-state current: 5.7A
VRDS(ON)gate voltage: 10V
VGS(th)V turn-on voltage: 2~4V
VGS(th)ld(μA) turn-on current: 250μA
IRF520N is a commonly used power field effect transistor with a wide range of applications in electronic circuits:
Communication equipment: IRF520N is used in communication equipment for power amplification and switching control to ensure the stability of signal transmission.
Automotive electronics: In automotive electronics systems, IRF520N is commonly used to control the motor drive and power management of electric vehicles.
Industrial control: In the field of industrial automation, IRF520N can be used to control high-power devices, robots and sensors, etc.
Power management: IRF520N can be used to design voltage regulators, switching power supplies and battery management systems.
LED lighting: In LED lighting control circuits, the IRF520N can be used for dimming and switching control to improve the efficiency and flexibility of lighting systems.