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12Pcs RFP30N06LE P30N06LE 30N06 MOSFET 60V 30A N-Channel Transistors

KWD 2.500
Brand
Shutao
Weight
5 g
– 1 +

Special Features

  • RFP30N06LE's N-Channel Enhancement-Mode Power MOSFET design ensures reliable operation
  • This MOSFET can handle up to 30A drain current and 60V drain-source voltage for robust performance
  • Logic level compatibility means RFP30N06LE is perfect for low-voltage control circuits
  • Trust RFP30N06LE to provide high current and voltage handling with added protection against ESD and avalanches
  • High-performance power management for demanding applications like motor drives, with RFP30N06LE's high current, voltage, and fast switching capabilities

Description

Maximum leakage source voltage (VDS): 60V
Maximum leakage source current (IDS): 30A
On resistance (RDS (on)): 0.135 Ω
Gate threshold voltage (VGS (th)): 2V
Working temperature range:- 55°C to 150°C
RFP30N06LE is suitable for inverters, converters, switching power supplies, electric vehicle chargers, and motor drives

The RFP30N06LE is equipped with ESD protection to withstand electrostatic discharge
It is also avalanche rated for stability at high voltages
This transistor can be used in a variety of applications from inverters and converters to electric vehicle chargers and motor drives

Package include:
12 x RFP30N06LE mosfet transistor

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